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d-pak IRLR8726pbf i-pak irlu8726pbf benefits very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current lead-free rohs compliant applications high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use v dss r ds(on) max qg (typ.) 30v 5.8m @v gs = 10v 15nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c maximum power dissipation w p d @t c = 100c maximum power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.0 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 75 max. 86 61 340 20 30 0.5 38 300 (1.6mm from case) -55 to + 175 2014-8-16 1 www.kersemi.com IRLR8726pbf irlu8726pbf
static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 20 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 4.0 5.8 m ??? 5.8 8.0 v gs(th) gate threshold voltage 1.35 1.80 2.35 v v gs(th) / t j gate threshold voltage coefficient ??? -8.6 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 73 ??? ??? s q g total gate charge ??? 15 23 q gs1 pre-vth gate-to-source charge ??? 3.7 ??? q gs2 post-vth gate-to-source charge ??? 1.9 ??? nc q gd gate-to-drain charge ??? 5.7 ??? q godr gate charge overdrive ??? 3.7 ??? see fig. 15 q sw switch charge (q gs2 + q gd ) ??? 7.6 ??? q oss output charge ??? 10 ??? nc r g gate resistance ??? 2.0 3.5 t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 49 ??? t d(off) turn-off delay time ??? 15 ??? ns t f fall time ??? 16 ??? c iss input capacitance ??? 2150 ??? c oss output capacitance ??? 480 ??? pf c rss reverse transfer capacitance ??? 205 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 86 (body diode) a i sm pulsed source current ??? ??? 340 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 24 36 ns q rr reverse recovery charge ??? 52 78 nc ? = 1.0mhz v gs = 4.5v, i d = 20a v gs = 20v v gs = -20v v ds = v gs , i d = 50 a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 25a mosfet symbol v ds = 15v, i d = 20a v ds = 15v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 20a v ds = 15v conditions see fig. 13 v gs = 4.5v t j = 25c, i f = 20a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? ??? i d = 20a v gs = 0v v ds = 15v r g = 1.8 max. 120 20 irlr/u8726pbf 2014-8-16 2 www.kersemi.com
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 0.0 2.0 4.0 6.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60 s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 25a v gs = 10v irlr/u8726pbf 2014-8-16 3 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 4 8 1216202428323640 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 20a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t c = 25c t j = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec irlr/u8726pbf 2014-8-16 4 www.kersemi.com
fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 500 a i d = 50 a i d = 25 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.014297 0.000003 0.373312 0.00009 1.010326 0.000973 0.602065 0.007272 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 irlr/u8726pbf 2014-8-16 5 www.kersemi.com
fig 12a. maximum avalanche energy vs. drain current fig 12c. unclamped inductive waveforms fig 12b. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.6a 8.2a bottom 20a v ds 90% 10% v gs t d(on) t r t d(off) t f fig 13a. switching time test circuit fig 13b. switching time waveforms
1 0.1 % + - irlr/u8726pbf 2014-8-16 6 www.kersemi.com
fig 15. gate charge test circuit fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 14. for hexfet power mosfets 1k vcc dut 0 l s 20k ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' irlr/u8726pbf 2014-8-16 7 www.kersemi.com

internat ional as s embled on ww 16, 2001 in the assembly line "a" or note: "p" in as sembly line position example: lot code 1234 this is an irfr120 wit h as s e mb l y i ndi cates " l ead- f r ee" product (opt ional) p = des ignates lead-f ree a = as s e mb l y s i t e cod e part number we e k 16 dat e code year 1 = 2001 rect ifier int ernational logo lot code assembly 34 12 irfr120 116a line a 34 rect ifier logo irf r120 12 as s e mb l y lot code year 1 = 2001 dat e code part number we e k 16 "p" in assembly line position indicates " l ead- f r ee" qual i fi cati on to the cons umer - l evel p = des ignates lead-f ree product qualified t o t he consumer level (optional) irlr/u8726pbf 2014-8-16 8 www.kersemi.com

78 line a logo int ernat ional rect ifier or product (optional) p = de s i gnat e s l e ad- f r e e a = assembly site code irfu120 part number week 19 dat e code year 1 = 2001 rect ifier int ernat ional logo as s e mb l y lot code irfu120 56 dat e code part number lot code assembly 56 78 year 1 = 2001 week 19 119a i ndi cates l ead- f r ee" as s emble d on ww 19, 2001 in the assembly line "a" note: "p" in as s embly line pos ition example: with assembly t his is an irfu120 lot code 5678 irlr/u8726pbf 2014-8-16 9 www.kersemi.com

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch irlr/u8726pbf 2014-8-16 10 www.kersemi.com
note form quantity IRLR8726pbf d-pak tube/bulk 75 IRLR8726trpbf d-pak tape and reel 2000 irlu8726pbf i-pak tube/bulk 75 orderable part number package type standard pack qualification level moisture sensitivity level d-pak ms l 1 (per je de c j-s t d-020d ??? ) i-pak not applicable rohs compliant yes comments: this family of products has passed jedec?s industrial qualification. ir?s consumer qualification level is granted by extension of the higher industrial level. qualification information ? industrial ?? (per jedec jesd47f ??? guidelines) irlr/u8726pbf 2014-8-16 11 www.kersemi.com

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